Published June 1997
by Materials Research Society .
|Contributions||Tomas Diaz De LA Rubia (Editor), Salvatore Coffa (Editor), Peter A. Stolk (Editor), Conor S. Rafferty (Editor)|
|The Physical Object|
|Number of Pages||541|
There are many forms of crystal point defects.A defect wherein a silicon atom is missing from one of these sites is known as a 'vacancy' defect. If an atom is located in a non-lattice site within the crystal, then it is said to be an 'interstitial' the interstitial defect involves a silicon atom at an interstitial site within a silicon crystal, then it is referred to as a 'self. This chapter on diffusion in Si starts with an introduction on the significance of diffusion research in semiconductors to determine the properties of atomic defects. Diffusion in solids is treated from a phenomenological and atomistic point of by: 1. The status of our understanding of defects in silicon will be reviewed with the emphasis on aspects pertinent to photo-voltaic solar minority carrier diffusion length in solar grade silicon will be discussed. NOTES. ON SILICON DEVICE Murray Hill, NJ The trends in silicon processing for the next decade feature increasing numbers. Get this from a library! Defects and diffusion in silicon processing: symposium held April , , San Francisco, California, U.S.A.. [Tomas Diaz de la Rubia;].
1. Introduction. Understanding the intrinsic defects in silicon — lattice vacancies and interstitials — represents the first logical step toward unraveling radiation damage in the material, because these are the primary defects produced as incoming Cited by: Purchase Science and Technology of Defects in Silicon, Volume 9 - 1st Edition. Print Book & E-Book. ISBN , Book Edition: 1. Semiconductor Processing and Characterization Techniques: Silicon Oxide Growth & Defects, impurities, and diffusion Professor Benjamín Alemán Department of Physics University of Oregon N C C Vacancy C. Last time Single-crystal Silicon via the Float-zone process. Single crystal Growth of GaAs. Abstract. Point Defects (i.e. vacancies and selfinterstials are zero-dimensional defects) in silicon. In solids in general, such defects are unavoidable, their presence follows from the Second Law of Thermodynamics; for a given temperature and for each species of intrinsic point defects (vacancy, self-interstitial).Cited by: 2.
Considerable effort has been devoted to modeling metal gettering processes, including metal dissolution from the precipitates (for multicrystalline solar silicon) and diffusion of metal atoms to, and their stabilization at, the gettering sites (Sopori et al. –, Tan et al. ).To be gettered, metal atoms need to diffuse for ∼10 μm for ICs using IG, and for more than μm . Antisite defects occur in an ordered alloy or compound when atoms of different type exchange positions. For example, some alloys have a regular structure in which every other atom is a different species; for illustration assume that type A atoms sit on the corners of a cubic lattice, and type B atoms sit in the center of the cubes. The following document was written in as a chapter on Diffusion in Silicon for inclu-sion in a highly technical - text book on Silicon Integrated Circuit Process Technology. For marketing reasons we abandoned the book without completing it . Enhanced Diffusion in Silicon Processing. The theory of defects in silicon has evolved tremendously in the past half century and has become quantitative in Author: Nick Cowern.